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 TQM7M4006
DATASHEET
3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module Functional Block Diagram
DCS / PCS in DCS / PCS Out
Features
* * * * * * * * * * Very compact size - 5x5x1.1 mm3. Positive supply voltage - 3.0 to 4.5 V. High efficiency - typical GSM850 52%, GSM900 57%, DCS 51%, PCS 51%. CMOS internal closed-loop power control. >55 dB dynamic control range. GPRS class 12 compatible. High-reliability InGaP technology. Ruggedness 10:1. 50 input and output impedances. Few external components
Band Select Logic TX_EN VBATT VRAMP Power Control VCC
GSM 850 / 900 IN
GSM 850 / 900 Out
Product Description
The TQM7M4006 is an advanced, quad-band, ultra-compact, 3V power amplifier module designed for mobile handset applications. The module sets new standards in performance and size by employing the latest technologies in HBT power amplifier design, laminate design and CuFlipTM assembly technology. Highreliability is assured by InGaP HBT technology. This fully integrated module, in a minimal form factor, provides a simple 50 interface on all input and output ports. It includes internal power control with wide dynamic range, and on-board reference voltage. No external matching or bias components are required. Despite its very compact size, the module has exceptional efficiency in all bands. Incorporates two highly-integrated InGaP power amplifier die, a GaAs high Q passive matching die with a CMOS controller. All die are CuFlipTM mounted to minimize thermal excursions. Each amplifier has three gain stages with interstage matching implemented with a high Q passives technology for optimal performance. The CMOS controller implements a fully integrated power control circuit within the module, eliminating the need for external detection to assure the output power level. The latter is set directly from the Vramp input from the DAC. The module has Tx enable and band select inputs and a highly-stable on-board reference voltage. Excellent performance is achieved across the 824 - 849 MHz, 880 - 915 MHz, 1710 - 1785 MHz, and 1850 - 1910 MHz bands. Module construction is a low-profile overmolded land-grid array on laminate.
Applications
* * GSM handsets GSM wireless cards and data links
Package Style
Package Size: LGA 5 x 5 x 1.1 mm3
Top View
Vcc2D RF_in_DCS
BS Tx_En Vbatt Vramp
RF_out_DCS Gnd Vcc3 RF_out_GSM
Electrical Specifications
Parameter Min GSM Pout Efficiency Pin 34.2 44 1.5 850 Band Typ 35 52 5 8 Max Min 34.2 50 1.5 900 Band Typ 35 57 5 8 Max DCS / PCS Band Min 32.5/32 44/44 1.5 Typ 33/32.5 51/51 5 8 Max dBm % dBm Units
RF_in_GSM Vcc2G
All specifications subject to change without notice
2
For additional information and latest specifications, see our website: www.triquint.com February 22, 2006 (Rev. E)
TQM7M4006
DATASHEET
3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module
Absolute Maximum Ratings
Symbol VBAT IBAT VRAMP VSWR TC TSTG PIN ESD ruggedness All ports Supply Voltage DC Supply Current Power Control Voltage Duty Cycle at Max. Power Output Load Case Temperature, Operating Storage Temperature Input Power HBM per EIA/JESD22-A114 CDM per JESD22-C101 Parameter Absolute Maximum Value -0.5 to 5.5 2.5 -0.5 to VBAT 50 10:1 -20 to +100 -55 to +150 12 2000 2000 C C dBm V V Units VDC A V %
Note: The part will survive over the full range specified for any individual input, while other parameters are nominal and with no RF input.
Operating Parameters
Parameter Supply Voltage- VBAT Supply Current- IBAT Band Select VoltageGSM DCS/PCS TX Enable Input Low High Leakage Current - IL Load Impedances- Z0 Case Temperature- TC -20 Vbs- L Vbs- H VTX_EN- L VTX_EN- H VTX_EN- L, VRAMP = 0.23V 0 1.2 0 1.2 1 50 +85 Conditions Min. 3.0 Typ/Nom 3.5 1.8 0.5 3.0 0.5 3.0 10 Max. 4.5 Units V A Vdc Vdc Vdc Vdc A C
All specifications subject to change without notice
3
For additional information and latest specifications, see our website: www.triquint.com February 22, 2006 (Rev. E)
TQM7M4006
DATASHEET
3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module
GSM850/GSM900 Mode Characteristics
Standard Conditions: VBATT=3.5V, Vramp=1.6V, Pin=5 dBm, TX_EN = H, BS = L, TC = 25C, Duty Cycle = 25%.
Parameter Frequency Range- f GSM850 GSM900 Input Power for Pout max.- Pin Output Power- Pout Output Power Degradation Power Added Efficiency- Power Control Voltage- VRAMP Power Control Range Input VSWR GSM850 Band GSM900 Band
Conditions
Min. 824 880 1.5 34.2 34.2 32.5 44 50 0.2
Typ/Nom
Max. 849 915
Units MHz MHz dBm dBm dBm dBm % %
5.0 35.5 35.2 52 57
8.0
Vbatt=3.0V, Pin=5dBm, Tmin < TC1.6 57 3.3 :1 3.0 :1 -32 -23 -20 -20 -30 -17 -10 -10 -81 -74 -82
V dB
Forward Isolation 1- Iso1 Forward Isolation 2- Iso2 Harmonics: Rx Noise Power: 2f0 3f0 869 - 894 MHz 925 - 935 MHz 935 - 960 MHz Stability Ruggedness Cross Isolation - 2nd Harmonic of GSM fundamental at DCS/PCS Port
VTX_EN- L, Pin Pin_max VTX_EN- H, VRAMP = 0.23V
dBm dBm dBm dBm dBm dBm dBm
RBW = 100 kHz; 5dBm-84 -80 -85
-23
-17
dBm
All specifications subject to change without notice
4
For additional information and latest specifications, see our website: www.triquint.com February 22, 2006 (Rev. E)
TQM7M4006
DATASHEET
3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module
DCS1800/PCS1900 Mode Characteristics
Standard Conditions: VBATT=3.5V, Vramp=1.6V, Pin=5 dBm, TX_EN = H, BS = H, TC = 25C, Duty Cycle = 25%.
Parameter Frequency Range- f Input Power for Pout max.- Pin Output Power- Pout 1710 - 1785 MHz 1850 - 1910 MHz Output Power Degradation 1710 - 1785 MHz 1850 - 1910 MHz Power Added Efficiency- 1710 - 1785 MHz 1850 - 1910 MHz Power Control Voltage- VRAMP Power Control Range Input VSWR Forward Isolation 1- Iso1 Forward Isolation 2- Iso2 Harmonics Rx Noise Power: 1805-1880MHz 1930-1990MHz Stability Ruggedness 2f0 3f0 VRAMP = 1.6 VDC
Conditions
Min. 1710 1850 1.5 32.5 32.0
Typ/Nom
Max. 1785 1910
Units MHz MHz dBm dBm dBm dBm dBm
5.0 33.0 32.5
8.0
Vbatt=3.0V, Pin=5dBm, Tmin < TC% % V dB
All specifications subject to change without notice
5
For additional information and latest specifications, see our website: www.triquint.com February 22, 2006 (Rev. E)
TQM7M4006
DATASHEET
3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module
Pin Out Diagram
27 26 25 1 2 3 4 5 6 7 8 9 10 11 12 13 14 24 23 22 21 20 19
GND
18 17 16 15
Pin
Symbol
Description
DCS/PCS power in No connect Band select input Transmit enable Supply voltage DAC voltage input No connect GSM850/900 power in Vcc voltage input GSM850/900 power out Vcc voltage output DCS/PCS power out Vcc voltage input
RFin - DCS/PCS 1 NC 2 Vbs 3 Txen 4 Vbat 5 Vramp 6 NC 7 RFin - Cell/GSM 8 Vcc2G 10 RFout - Cell/GSM 17 Vcc3 18 RFout - DCS/PCS 20 Vcc2D 26 All other pins are ground
For additional information and latest specifications, see our website: www.triquint.com February 22, 2006 (Rev. E)
All specifications subject to change without notice
6
TQM7M4006
DATASHEET
3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module
Logic Table
Operating Mode GMSK, High Band GMSK, Low Band PA Off Band Select High Low X Tx Enable High - Enabled Low - Disabled High - Enabled Low - Disabled Low X 0.2 to 1.6 VDC Vramp 0.2 to 1.6 VDC
X- Don't Care
All specifications subject to change without notice
7
For additional information and latest specifications, see our website: www.triquint.com February 22, 2006 (Rev. E)
TQM7M4006
DATASHEET
3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module
Test/Typical Application Circuit:
VCC2
RFIN_HB NC BS TXEN VBATT C1 VRAMP RFIN_LB VCC2 R1 NC C2 RFOUT_HB C3 VCC3 RFOUT_LB
GND
Bill of Material for TQM7M4006 Power Amplifier Module Test/Application Circuit1
Component Power Amplifier Module Capacitor (See note 2) Capacitor (See note 2) Capacitor Resistor (See note 2)
Note 1: Note 2:
Reference Designator C1 C2 C3 R1
Part Number TQM7M4006
Value
Size 28pin/5mm square TBD 0402 0402 0402
TBD TBD 15p TBD
May vary due to printed circuit board layout and material Value of R1, C1 vary based on base-band. C2 depends on phone noise. Please see application note for further information.
All specifications subject to change without notice
8
For additional information and latest specifications, see our website: www.triquint.com February 22, 2006 (Rev. E)
TQM7M4006
DATASHEET
3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module
PC Board Layout Recommendations:
All specifications subject to change without notice
9
For additional information and latest specifications, see our website: www.triquint.com February 22, 2006 (Rev. E)
TQM7M4006
DATASHEET
3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module
Package Dimensional Drawings:
All specifications subject to change without notice
10
For additional information and latest specifications, see our website: www.triquint.com February 22, 2006 (Rev. E)
TQM7M4006
DATASHEET
3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module
Tape and Reel*:
*Information provided as informational only. Please request TriQuint PKG.075 for controlling documentation. Module Orientation
Carrier and Cover Tape Physical Dimensions
FIXED CARRIER AND COVER TAPE DIMENSIONS PART FEATURE SYMBOL SIZE (in) SIZE (mm) CAVITY BOTTOM HOLE DIAMETER D1 0.059 1.50 PERFORATION DIAMETER D0 0.059 1.50 PITCH P0 0.157 4.00 POSITION E1 0.069 1.75 CARRIER TAPE THICKNESS T 0.012 0.30 COVER TAPE THICKNESS T1 0.002 0.056
All specifications subject to change without notice
11
For additional information and latest specifications, see our website: www.triquint.com February 22, 2006 (Rev. E)
TQM7M4006
DATASHEET
3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module
MODULE -5x5 CARRIER AND COVER TAPE DIMENSIONS FEATURE SYMBOL SIZE (in) SIZE (mm) LENGTH A0 0.207 5.25 WIDTH B0 0.207 5.25 DEPTH K0 0.071 1.80 PITCH P1 0.315 8.00 DISTANCE CAVITY TO PERFORATION P2 0.079 2.00 BETWEEN LENGTH DIRECTION CENTERLINE CAVITY TO PERFORATION F 0.217 5.50 WIDTH DIRECTION COVER TAPE WIDTH C 0.362 9.20 CARRIER TAPE WIDTH W 0.472 12.00 PART CAVITY
Reel Physical Dimensions
All specifications subject to change without notice
12
For additional information and latest specifications, see our website: www.triquint.com February 22, 2006 (Rev. E)
TQM7M4006
DATASHEET
3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module
Reel Dimensions for 12mm Carrier Tape Modules 5x5 13" REEL PART FEATURE SYMBOL SIZE (in) SIZE (mm) FLANGE DIAMETER A 12.992 330 THICKNESS W2 0.717 18.2 SPACE BETWEEN FLANGE W1 0.504 12.8 HUB OUTER DIAMETER N 4.016 102.0 ARBOR HOLE DIAMETER C 0.512 13.0 KEY SLIT WIDTH B 0.079 2.0 KEY SLIT DIAMETER D 0.787 20.0
Tape Length
Label Placement
Product label, Mfg Label and ESD label are placed on the flange opposite to the sprockets in the carrier tape
Quantity Per Reel: 2500
All specifications subject to change without notice
13
For additional information and latest specifications, see our website: www.triquint.com February 22, 2006 (Rev. E)
TQM7M4006
DATASHEET
3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module
Marking Diagram*:
*Information provided as informational only. Please request TriQuint MRK.TQM7M4006 for controlling documentation.
WHITE INK OR LASER MARK
Line 1: TriQuint logo Line 2: Product Code = 7M4006 Line 3: AaXXXX = Aa (2 letter vendor code)+Last 4 digits of TriQuint assembly lot number Line 4: YYWW = Year and Work Week Additional Information 1 This part is compliant with RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). The part is rated Moisture Sensitivity Level 3 at 260C per JEDEC standard IPC/JEDEC J-STD-020.
1 For latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: info_wireless@tqs.com Tel: (503) 615-9000 Fax: (503) 615-8902
For technical questions and additional information on specific applications: Email: info_wireless@tqs.com
The information provided herein is believed to be reliable; TriQuint assumes no liability for inaccuracies or omissions. TriQuint assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. TriQuint does not authorize or warrant any TriQuint product for use in life-support devices and/or systems. Copyright (c) 2005 TriQuint Semiconductor, Inc. All rights reserved.
All specifications subject to change without notice
14
For additional information and latest specifications, see our website: www.triquint.com February 22, 2006 (Rev. E)


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